Experimental study of iron redistribution between bulk defects and boron doped layer in silicon wafers

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Abstract

We have studied iron distribution between a boron-implanted (p+) layer and bulk defects in single crystalline silicon wafers after various gettering anneals. Our results show that iron accumulation into the p+ layer was pronounced after each anneal. However, we were able to decrease the strong accumulation by combining a specific low-high anneal with high bulk defect density. We determined the dominant mechanism behind the accumulation of iron into the p+ layer, which turned out to be precipitation instead of segregation. The results can be helpful when choosing the internal gettering steps for both microelectronic (IC) and multicrystalline silicon photovoltaic (PV) processes.

Details

Original languageEnglish
Pages (from-to)2430-2436
JournalPHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE
Volume208
Issue number10
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

ID: 739954