Experimental study of iron redistribution between bulk defects and boron doped layer in silicon wafers

Heli Talvitie, Marko Yli-Koski, Antti Haarahiltunen, Ville Vähänissi, Muhammad Imran Asghar, Hele Savin

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

We have studied iron distribution between a boron-implanted (p+) layer and bulk defects in single crystalline silicon wafers after various gettering anneals. Our results show that iron accumulation into the p+ layer was pronounced after each anneal. However, we were able to decrease the strong accumulation by combining a specific low-high anneal with high bulk defect density. We determined the dominant mechanism behind the accumulation of iron into the p+ layer, which turned out to be precipitation instead of segregation. The results can be helpful when choosing the internal gettering steps for both microelectronic (IC) and multicrystalline silicon photovoltaic (PV) processes.
Original languageEnglish
Pages (from-to)2430-2436
JournalPHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE
Volume208
Issue number10
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

Fingerprint Dive into the research topics of 'Experimental study of iron redistribution between bulk defects and boron doped layer in silicon wafers'. Together they form a unique fingerprint.

  • Cite this