We have studied iron distribution between a boron-implanted (p+) layer and bulk defects in single crystalline silicon wafers after various gettering anneals. Our results show that iron accumulation into the p+ layer was pronounced after each anneal. However, we were able to decrease the strong accumulation by combining a specific low-high anneal with high bulk defect density. We determined the dominant mechanism behind the accumulation of iron into the p+ layer, which turned out to be precipitation instead of segregation. The results can be helpful when choosing the internal gettering steps for both microelectronic (IC) and multicrystalline silicon photovoltaic (PV) processes.
|Journal||PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE|
|Publication status||Published - 2011|
|MoE publication type||A1 Journal article-refereed|
Talvitie, H., Yli-Koski, M., Haarahiltunen, A., Vähänissi, V., Asghar, M. I., & Savin, H. (2011). Experimental study of iron redistribution between bulk defects and boron doped layer in silicon wafers. PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE, 208(10), 2430-2436. https://doi.org/10.1002/pssa.201026534