Experimental study of carrier density tuning in epitaxial graphene QHR devices

N. Fletcher, P. Gournay, B. Rolland, M. Gotz, S. Novikov, N. Lebedeva, A. Satrapinski

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

Adjustment of the charge carrier density in quantized Hall resistance (QHR) devices based on epitaxial SiC graphene films can be performed using photochemical and chemical gating. Our experiments show that the carrier concentration in fabricated graphene devices can be reversibly varied by either treatment with UV light or using molecules from aqua ammonia. Treatment of SiC graphene QHR devices in such a way provides tuning of carrier concentration to optimum values, in the range (1-3) × 1011 cm-2, at which the dissipation in QHR regime is reduced and the full quantization of Hall resistance is expected.

Original languageEnglish
Title of host publicationCPEM 2016 - Conference on Precision Electromagnetic Measurements, Conference Digest
PublisherIEEE
Number of pages2
ISBN (Electronic)9781467391344
DOIs
Publication statusPublished - 10 Aug 2016
MoE publication typeA4 Article in a conference publication
EventConference on Precision Electromagnetic Measurements - Ottawa, Canada
Duration: 10 Jul 201615 Jul 2016

Publication series

NameConference on precision electromagnetic measurements
PublisherIEEE
ISSN (Electronic)2160-0171

Conference

ConferenceConference on Precision Electromagnetic Measurements
Abbreviated titleCPEM
CountryCanada
CityOttawa
Period10/07/201615/07/2016

Keywords

  • carrier concentration
  • chemical functionalization
  • Epitaxial graphene
  • graphene fabrication
  • precision measurement

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