Experimental investigation of traps in THz Schottky diodes

Subash Khanal, Tero Kiuru, Heikki Seppä, Juha Mallat, Petri Piironen, Antti Räisänen

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

In this paper, indications of charge trapping in THz Schottky diodes are investigated with various measurement techniques including current-voltage, capacitance and low-frequency noise measurements. GaAs diodes from various manufacturers are tested. For comparison purposes, results for two different diode samples are presented. Correlation between different measurement techniques is observed which indicate the presence of traps in measured Schottky diode samples. I-V and C-V measurements show some trapping behavior. However, it is also important to observe frequency dependency of the diode capacitance and low-frequency noise properties to closely monitor the charge trapping in small area Schottky diodes. Diode samples are measured in on-wafer environment using a probe station.

Original languageEnglish
Title of host publication2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications
PublisherIEEE
ISBN (Electronic)9781509013487
DOIs
Publication statusPublished - 27 Jun 2016
MoE publication typeA4 Article in a conference publication
Event9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications - Aalto University, Espoo, Finland
Duration: 6 Jun 20168 Jun 2016
http://gsmm2016.aalto.fi/

Conference

Conference9th Global Symposium on Millimeter-Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications
Abbreviated titleGSMM
CountryFinland
CityEspoo
Period06/06/201608/06/2016
Internet address

Keywords

  • Low-frequency noise
  • measurement
  • Schottky diode
  • traps

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