Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnSSe

J. Oila, K. Saarinen, T. Laine, P. Hautojärvi, P. Uusimaa, M. Pessa, J. Likonen

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Cite this

@article{48275f938fda4d1e84476c694203e7f2,

title = "Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnSSe",

author = "J. Oila and K. Saarinen and T. Laine and P. Hautoj{\"a}rvi and P. Uusimaa and M. Pessa and J. Likonen",

year = "1999",

language = "English",

volume = "59",

pages = "p. R12736",

journal = "Physical Review B",

issn = "2469-9969",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnSSe

AU - Oila, J.

AU - Saarinen, K.

AU - Laine, T.

AU - Hautojärvi, P.

AU - Uusimaa, P.

AU - Pessa, M.

AU - Likonen, J.

PY - 1999

Y1 - 1999

M3 - Article

SN - 2469-9969

SN - 1550-235X

SN - 1095-3795

VL - 59

SP - p. R12736

JO - Physical Review B

JF - Physical Review B

ER -