Abstract
We report on the studies of the surface plasmon polaritons in n-GaN epitaxial layers. The grating etched on the surface of the epitaxial layer is used to excite surface plasmon polaritons by means of terahertz photons. The experimental reflectivity spectrum for p-polarized radiation demonstrates a set of resonances associated with excitation of different surface plasmon polariton modes. Spectral peculiarities due to the diffraction effect have been also revealed. Emission of terahertz radiation is investigated under epilayer temperature modulation by electric current. The emissivity spectrum of the epitaxial layer with surface-relief grating shows peaks in the frequency ranges corresponding to the decay of the surface plasmon polariton modes. The characteristic features of the reflectivity and emissivity spectra are well described theoretically by a differential method with explicit integration scheme.
Original language | English |
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Title of host publication | 33rd International Conference on the Physics of Semiconductors |
Publisher | IOP |
Number of pages | 4 |
Volume | 864 |
DOIs | |
Publication status | Published - 15 Aug 2017 |
MoE publication type | A4 Article in a conference publication |
Event | International Conference on the Physics of Semiconductors - Beijing, China Duration: 31 Jul 2016 → 5 Aug 2016 Conference number: 33 |
Publication series
Name | IOP Conference Series - Journal of Physics: Conference Series |
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Volume | 864 |
ISSN (Print) | 1742-6588 |
ISSN (Electronic) | 1742-6596 |
Conference
Conference | International Conference on the Physics of Semiconductors |
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Abbreviated title | ICPS |
Country/Territory | China |
City | Beijing |
Period | 31/07/2016 → 05/08/2016 |