Excitation and decay of surface plasmon polaritons in n-GaN

Vadim A. Shalygin; G. A. Melentev; Leonid E Vorobjev; Vadim Yu Panevin; D. A. Firsov; V. V. Korotyeyev; Yu M. Lyaschuk; V. A. Kochelap; S. Suihkonen

doi:10.1088/1742-6596/864/1/012073

Excitation and decay of surface plasmon polaritons in n-GaN

Vadim A. Shalygin, G. A. Melentev, Leonid E Vorobjev, Vadim Yu Panevin, D. A. Firsov, V. V. Korotyeyev, Yu M. Lyaschuk, V. A. Kochelap, S. Suihkonen

Department of Electronics and Nanoengineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

262 Downloads (Pure)

Abstract

We report on the studies of the surface plasmon polaritons in n-GaN epitaxial layers. The grating etched on the surface of the epitaxial layer is used to excite surface plasmon polaritons by means of terahertz photons. The experimental reflectivity spectrum for p-polarized radiation demonstrates a set of resonances associated with excitation of different surface plasmon polariton modes. Spectral peculiarities due to the diffraction effect have been also revealed. Emission of terahertz radiation is investigated under epilayer temperature modulation by electric current. The emissivity spectrum of the epitaxial layer with surface-relief grating shows peaks in the frequency ranges corresponding to the decay of the surface plasmon polariton modes. The characteristic features of the reflectivity and emissivity spectra are well described theoretically by a differential method with explicit integration scheme.

Original language	English
Title of host publication	33rd International Conference on the Physics of Semiconductors
Publisher	IOP
Number of pages	4
Volume	864
DOIs	https://doi.org/10.1088/1742-6596/864/1/012073
Publication status	Published - 15 Aug 2017
MoE publication type	A4 Article in a conference publication
Event	International Conference on the Physics of Semiconductors - Beijing, China Duration: 31 Jul 2016 → 5 Aug 2016 Conference number: 33

Publication series

Name	IOP Conference Series - Journal of Physics: Conference Series
Volume	864
ISSN (Print)	1742-6588
ISSN (Electronic)	1742-6596

Conference

Conference	International Conference on the Physics of Semiconductors
Abbreviated title	ICPS
Country/Territory	China
City	Beijing
Period	31/07/2016 → 05/08/2016

Access to Document

10.1088/1742-6596/864/1/012073Licence: CC BY

Shalygin_2017_J._Phys.__Conf._Ser._864_012073
Published under licence by IOP Publishing Ltd
Final published version, 961 KBLicence: CC BY

SFX availability

Full text

Cite this

Shalygin, V. A., Melentev, G. A., Vorobjev, L. E., Panevin, V. Y., Firsov, D. A., Korotyeyev, V. V., Lyaschuk, Y. M., Kochelap, V. A., & Suihkonen, S. (2017). Excitation and decay of surface plasmon polaritons in n-GaN. In 33rd International Conference on the Physics of Semiconductors (Vol. 864). [012073] (IOP Conference Series - Journal of Physics: Conference Series; Vol. 864). IOP. https://doi.org/10.1088/1742-6596/864/1/012073

Shalygin, Vadim A. ; Melentev, G. A. ; Vorobjev, Leonid E ; Panevin, Vadim Yu ; Firsov, D. A. ; Korotyeyev, V. V. ; Lyaschuk, Yu M. ; Kochelap, V. A. ; Suihkonen, S. / Excitation and decay of surface plasmon polaritons in n-GaN. 33rd International Conference on the Physics of Semiconductors. Vol. 864 IOP, 2017. (IOP Conference Series - Journal of Physics: Conference Series).

@inproceedings{b31d5b8085ae4ff888c2506a7554db5c,

title = "Excitation and decay of surface plasmon polaritons in n-GaN",

abstract = "We report on the studies of the surface plasmon polaritons in n-GaN epitaxial layers. The grating etched on the surface of the epitaxial layer is used to excite surface plasmon polaritons by means of terahertz photons. The experimental reflectivity spectrum for p-polarized radiation demonstrates a set of resonances associated with excitation of different surface plasmon polariton modes. Spectral peculiarities due to the diffraction effect have been also revealed. Emission of terahertz radiation is investigated under epilayer temperature modulation by electric current. The emissivity spectrum of the epitaxial layer with surface-relief grating shows peaks in the frequency ranges corresponding to the decay of the surface plasmon polariton modes. The characteristic features of the reflectivity and emissivity spectra are well described theoretically by a differential method with explicit integration scheme.",

author = "Shalygin, {Vadim A.} and Melentev, {G. A.} and Vorobjev, {Leonid E} and Panevin, {Vadim Yu} and Firsov, {D. A.} and Korotyeyev, {V. V.} and Lyaschuk, {Yu M.} and Kochelap, {V. A.} and S. Suihkonen",

year = "2017",

month = aug,

day = "15",

doi = "10.1088/1742-6596/864/1/012073",

language = "English",

volume = "864",

series = "IOP Conference Series - Journal of Physics: Conference Series",

publisher = "IOP",

booktitle = "33rd International Conference on the Physics of Semiconductors",

note = "International Conference on the Physics of Semiconductors , ICPS ; Conference date: 31-07-2016 Through 05-08-2016",

}

Shalygin, VA, Melentev, GA, Vorobjev, LE, Panevin, VY, Firsov, DA, Korotyeyev, VV, Lyaschuk, YM, Kochelap, VA & Suihkonen, S 2017, Excitation and decay of surface plasmon polaritons in n-GaN. in 33rd International Conference on the Physics of Semiconductors. vol. 864, 012073, IOP Conference Series - Journal of Physics: Conference Series, vol. 864, IOP, International Conference on the Physics of Semiconductors , Beijing, China, 31/07/2016. https://doi.org/10.1088/1742-6596/864/1/012073

Excitation and decay of surface plasmon polaritons in n-GaN. / Shalygin, Vadim A.; Melentev, G. A.; Vorobjev, Leonid E; Panevin, Vadim Yu; Firsov, D. A.; Korotyeyev, V. V.; Lyaschuk, Yu M.; Kochelap, V. A.; Suihkonen, S.

33rd International Conference on the Physics of Semiconductors. Vol. 864 IOP, 2017. 012073 (IOP Conference Series - Journal of Physics: Conference Series; Vol. 864).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Excitation and decay of surface plasmon polaritons in n-GaN

AU - Shalygin, Vadim A.

AU - Melentev, G. A.

AU - Vorobjev, Leonid E

AU - Panevin, Vadim Yu

AU - Firsov, D. A.

AU - Korotyeyev, V. V.

AU - Lyaschuk, Yu M.

AU - Kochelap, V. A.

AU - Suihkonen, S.

N1 - Conference code: 33

PY - 2017/8/15

Y1 - 2017/8/15

N2 - We report on the studies of the surface plasmon polaritons in n-GaN epitaxial layers. The grating etched on the surface of the epitaxial layer is used to excite surface plasmon polaritons by means of terahertz photons. The experimental reflectivity spectrum for p-polarized radiation demonstrates a set of resonances associated with excitation of different surface plasmon polariton modes. Spectral peculiarities due to the diffraction effect have been also revealed. Emission of terahertz radiation is investigated under epilayer temperature modulation by electric current. The emissivity spectrum of the epitaxial layer with surface-relief grating shows peaks in the frequency ranges corresponding to the decay of the surface plasmon polariton modes. The characteristic features of the reflectivity and emissivity spectra are well described theoretically by a differential method with explicit integration scheme.

AB - We report on the studies of the surface plasmon polaritons in n-GaN epitaxial layers. The grating etched on the surface of the epitaxial layer is used to excite surface plasmon polaritons by means of terahertz photons. The experimental reflectivity spectrum for p-polarized radiation demonstrates a set of resonances associated with excitation of different surface plasmon polariton modes. Spectral peculiarities due to the diffraction effect have been also revealed. Emission of terahertz radiation is investigated under epilayer temperature modulation by electric current. The emissivity spectrum of the epitaxial layer with surface-relief grating shows peaks in the frequency ranges corresponding to the decay of the surface plasmon polariton modes. The characteristic features of the reflectivity and emissivity spectra are well described theoretically by a differential method with explicit integration scheme.

UR - http://www.scopus.com/inward/record.url?scp=85028741779&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/864/1/012073

DO - 10.1088/1742-6596/864/1/012073

M3 - Conference contribution

AN - SCOPUS:85028741779

VL - 864

T3 - IOP Conference Series - Journal of Physics: Conference Series

BT - 33rd International Conference on the Physics of Semiconductors

PB - IOP

T2 - International Conference on the Physics of Semiconductors

Y2 - 31 July 2016 through 5 August 2016

ER -

Excitation and decay of surface plasmon polaritons in n-GaN

Abstract

Publication series

Conference

Access to Document

SFX availability

Other files and links

Fingerprint

Cite this