Excitation and decay of surface plasmon polaritons in n-GaN

Vadim A. Shalygin, G. A. Melentev, Leonid E Vorobjev, Vadim Yu Panevin, D. A. Firsov, V. V. Korotyeyev, Yu M. Lyaschuk, V. A. Kochelap, S. Suihkonen

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

2 Citations (Scopus)
262 Downloads (Pure)


We report on the studies of the surface plasmon polaritons in n-GaN epitaxial layers. The grating etched on the surface of the epitaxial layer is used to excite surface plasmon polaritons by means of terahertz photons. The experimental reflectivity spectrum for p-polarized radiation demonstrates a set of resonances associated with excitation of different surface plasmon polariton modes. Spectral peculiarities due to the diffraction effect have been also revealed. Emission of terahertz radiation is investigated under epilayer temperature modulation by electric current. The emissivity spectrum of the epitaxial layer with surface-relief grating shows peaks in the frequency ranges corresponding to the decay of the surface plasmon polariton modes. The characteristic features of the reflectivity and emissivity spectra are well described theoretically by a differential method with explicit integration scheme.

Original languageEnglish
Title of host publication33rd International Conference on the Physics of Semiconductors
Number of pages4
Publication statusPublished - 15 Aug 2017
MoE publication typeA4 Article in a conference publication
EventInternational Conference on the Physics of Semiconductors - Beijing, China
Duration: 31 Jul 20165 Aug 2016
Conference number: 33

Publication series

NameIOP Conference Series - Journal of Physics: Conference Series
ISSN (Print)1742-6588
ISSN (Electronic)1742-6596


ConferenceInternational Conference on the Physics of Semiconductors
Abbreviated titleICPS


Dive into the research topics of 'Excitation and decay of surface plasmon polaritons in n-GaN'. Together they form a unique fingerprint.

Cite this