Excellent silicon surface passivation using dimethylaluminium chloride as Al source for atomic layer deposited Al2O3

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Original languageEnglish
Pages (from-to)1795-1799
Number of pages5
JournalPHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE
Volume212
Issue number8
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

ID: 2037030