Evolution of vacancy-related defects upon annealing of ion-implanted germanium

J. Slotte, M. Rummukainen, F. Tuomisto, V.P. Markevich, A.R. Peaker, C. Jeynes, R. William

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Abstract

Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×1012 cm−2 and 4×1014 cm−2. Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1×1013 cm−2 and a fluence of 1×1014 cm−2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200–400 °C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.
Original languageEnglish
Article number085202
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B
Volume78
Issue number8
DOIs
Publication statusPublished - Aug 2008
MoE publication typeA1 Journal article-refereed

Keywords

  • Ge
  • ion implantation
  • positron

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    Slotte, J., Rummukainen, M., Tuomisto, F., Markevich, V. P., Peaker, A. R., Jeynes, C., & William, R. (2008). Evolution of vacancy-related defects upon annealing of ion-implanted germanium. Physical Review B, 78(8), 1-5. [085202]. https://doi.org/10.1103/PhysRevB.78.085202