Evolution of vacancy-related defects upon annealing of ion-implanted germanium

J. Slotte, M. Rummukainen, F. Tuomisto, V.P. Markevich, A.R. Peaker, C. Jeynes, R. William

Research output: Contribution to journalArticleScientificpeer-review

19 Citations (Scopus)
88 Downloads (Pure)


Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×1012 cm−2 and 4×1014 cm−2. Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1×1013 cm−2 and a fluence of 1×1014 cm−2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200–400 °C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.
Original languageEnglish
Article number085202
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B
Issue number8
Publication statusPublished - Aug 2008
MoE publication typeA1 Journal article-refereed


  • Ge
  • ion implantation
  • positron


Dive into the research topics of 'Evolution of vacancy-related defects upon annealing of ion-implanted germanium'. Together they form a unique fingerprint.

Cite this