Evolution of phosphorus-vacancy clusters in epitaxial germanium

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Evolution of phosphorus-vacancy clusters in epitaxial germanium. / Vohra, Anurag; Khanam, Afrina; Slotte, Jonatan; Makkonen, Ilja; Pourtois, Geoffrey; Loo, Roger; Vandervorst, Wilfried.

In: Journal of Applied Physics, Vol. 125, No. 2, 025701, 14.01.2019.

Research output: Contribution to journalArticleScientificpeer-review

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Vohra, A, Khanam, A, Slotte, J, Makkonen, I, Pourtois, G, Loo, R & Vandervorst, W 2019, 'Evolution of phosphorus-vacancy clusters in epitaxial germanium' Journal of Applied Physics, vol. 125, no. 2, 025701. https://doi.org/10.1063/1.5054996

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Vohra, Anurag ; Khanam, Afrina ; Slotte, Jonatan ; Makkonen, Ilja ; Pourtois, Geoffrey ; Loo, Roger ; Vandervorst, Wilfried. / Evolution of phosphorus-vacancy clusters in epitaxial germanium. In: Journal of Applied Physics. 2019 ; Vol. 125, No. 2.

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@article{1c0caea6add242cca370a38b12c5916e,
title = "Evolution of phosphorus-vacancy clusters in epitaxial germanium",
abstract = "The E centers (dopant-vacancy pairs) play a significant role in dopant deactivation in semiconductors. In order to gain insight into dopant-defect interactions during epitaxial growth of in situ phosphorus doped Ge, positron annihilation spectroscopy, which is sensitive to open-volume defects, was performed on Ge layers grown by chemical vapor deposition with different concentrations of phosphorus (∼ 1 × 10 18- 1 × 10 20 cm - 3). Experimental results supported by first-principles calculations based on the two component density-functional theory gave evidence for the existence of mono-vacancies decorated by several phosphorus atoms as the dominant defect type in the epitaxial Ge. The concentration of vacancies increases with the amount of P-doping. The number of P atoms around the vacancy also increases, depending on the P concentration. The evolution of P n-V clusters in Ge contributes significantly to the dopant deactivation.",
author = "Anurag Vohra and Afrina Khanam and Jonatan Slotte and Ilja Makkonen and Geoffrey Pourtois and Roger Loo and Wilfried Vandervorst",
year = "2019",
month = "1",
day = "14",
doi = "10.1063/1.5054996",
language = "English",
volume = "125",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMERICAN INSTITUTE OF PHYSICS",
number = "2",

}

RIS - Download

TY - JOUR

T1 - Evolution of phosphorus-vacancy clusters in epitaxial germanium

AU - Vohra, Anurag

AU - Khanam, Afrina

AU - Slotte, Jonatan

AU - Makkonen, Ilja

AU - Pourtois, Geoffrey

AU - Loo, Roger

AU - Vandervorst, Wilfried

PY - 2019/1/14

Y1 - 2019/1/14

N2 - The E centers (dopant-vacancy pairs) play a significant role in dopant deactivation in semiconductors. In order to gain insight into dopant-defect interactions during epitaxial growth of in situ phosphorus doped Ge, positron annihilation spectroscopy, which is sensitive to open-volume defects, was performed on Ge layers grown by chemical vapor deposition with different concentrations of phosphorus (∼ 1 × 10 18- 1 × 10 20 cm - 3). Experimental results supported by first-principles calculations based on the two component density-functional theory gave evidence for the existence of mono-vacancies decorated by several phosphorus atoms as the dominant defect type in the epitaxial Ge. The concentration of vacancies increases with the amount of P-doping. The number of P atoms around the vacancy also increases, depending on the P concentration. The evolution of P n-V clusters in Ge contributes significantly to the dopant deactivation.

AB - The E centers (dopant-vacancy pairs) play a significant role in dopant deactivation in semiconductors. In order to gain insight into dopant-defect interactions during epitaxial growth of in situ phosphorus doped Ge, positron annihilation spectroscopy, which is sensitive to open-volume defects, was performed on Ge layers grown by chemical vapor deposition with different concentrations of phosphorus (∼ 1 × 10 18- 1 × 10 20 cm - 3). Experimental results supported by first-principles calculations based on the two component density-functional theory gave evidence for the existence of mono-vacancies decorated by several phosphorus atoms as the dominant defect type in the epitaxial Ge. The concentration of vacancies increases with the amount of P-doping. The number of P atoms around the vacancy also increases, depending on the P concentration. The evolution of P n-V clusters in Ge contributes significantly to the dopant deactivation.

UR - http://www.scopus.com/inward/record.url?scp=85059857216&partnerID=8YFLogxK

U2 - 10.1063/1.5054996

DO - 10.1063/1.5054996

M3 - Article

VL - 125

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

M1 - 025701

ER -

ID: 31435293