Evolution of E-centers during the annealing of Sb-doped Si0.8Ge0.2

S. Kilpeläinen, F. Tuomisto, J. Slotte, J. Lundsgaard Hansen, A. Nylandsted Larsen

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)
184 Downloads (Pure)

Abstract

Evolution of the chemical surroundings of vacancy complexes in Sb-doped ([Sb]=2×1018 and 2×1019 cm−3) Si0.8Ge0.2 was studied with positron annihilation spectroscopy in Doppler broadening mode. The study was performed by annealing the samples both isochronally and isothermally. Defect evolution was observed at the temperature range 450–650 K. Both treatments were shown to induce changes in the chemical surroundings of the E-centers via introduction of Ge near the defects. Moreover, Sb was found to hinder these changes by stabilizing the E-centers and thus preventing them from finding Ge. The stable state reached after the anneals was found to differ from that measured from an as-grown sample. This difference was deemed to be the result of Ge gathering in small clusters during the annealing thus breaking the initially random Ge distribution.
Original languageEnglish
Article number094115
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B
Volume83
Issue number9
DOIs
Publication statusPublished - Mar 2011
MoE publication typeA1 Journal article-refereed

Keywords

  • E-center
  • positron
  • SiGe
  • vacancy

Fingerprint Dive into the research topics of 'Evolution of E-centers during the annealing of Sb-doped Si<sub>0.8</sub>Ge<sub>0.2</sub>'. Together they form a unique fingerprint.

  • Cite this