Evaluation of the concentration of point defects in GaN

Research output: Contribution to journalArticle

Details

Original languageEnglish
Article number9297
Pages (from-to)1-11
JournalScientific Reports
Volume7
Issue number1
StatePublished - 1 Dec 2017
MoE publication typeA1 Journal article-refereed

Researchers

Research units

  • Virginia Commonwealth University
  • Nitride Crystals Inc.
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • Kyma Technologies, Inc.

Abstract

Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS). Defect-related PL intensity in undoped GaN grown by hydride vapor phase epitaxy increases linearly with the concentration of related defects only up to 1016 cm-3. At higher concentrations, the PL intensity associated with individual defects tends to saturate, and accordingly, does not directly correlate with the concentration of defects. For this reason, SIMS analysis, with relatively high detection limits, may not be helpful for classifying unidentified point defects in GaN. Additionally, we highlight challenges in correlating defects identified by PL with those by PAS and DLTS methods.

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