Evaluation of the concentration of point defects in GaN

M. A. Reshchikov*, A. Usikov, H. Helava, Yu N. Makarov, V. Prozheeva, I. Makkonen, F. Tuomisto, J. H. Leach, K. Udwary

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS). Defect-related PL intensity in undoped GaN grown by hydride vapor phase epitaxy increases linearly with the concentration of related defects only up to 1016 cm-3. At higher concentrations, the PL intensity associated with individual defects tends to saturate, and accordingly, does not directly correlate with the concentration of defects. For this reason, SIMS analysis, with relatively high detection limits, may not be helpful for classifying unidentified point defects in GaN. Additionally, we highlight challenges in correlating defects identified by PL with those by PAS and DLTS methods.

Original languageEnglish
Article number9297
Pages (from-to)1-11
JournalScientific Reports
Issue number1
Publication statusPublished - 1 Dec 2017
MoE publication typeA1 Journal article-refereed

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