Evaluation of HfN thin films considered as diffusion barriers in the Al/HfN/Si system

R. Nowak, C. L. Li

Research output: Contribution to journalArticleScientificpeer-review

Abstract

A multilayer Al/HfN/Si system, prepared by the reactive sputtering method, was subsequently annealed at various temperatures in order to find out whether the HfN intermediate layer could serve as a diffusion barrier between metal (aluminum) and semiconductor (silicon). The structure of the system before and after annealing was investigated using thin film X-ray diffraction (grazing incidence XRD) and Auger electron spectroscopy (AES). Further, observations of the outer surface of Al/HfN/Si specimens, both in deposited and annealed states, were performed by means of optical and scanning electron microscopy (SEM). The results reveal that HfN constitutes a suitable material as a diffusion/reaction barrier for the metallization scheme in electronics. (C) 1997 Elsevier Science S.A.

Original languageEnglish
Pages (from-to)297-303
Number of pages7
JournalThin Solid Films
Volume305
Issue number1-2
DOIs
Publication statusPublished - Aug 1997
MoE publication typeA1 Journal article-refereed

Keywords

  • diffusion
  • multilayers
  • nitrides
  • sputtering
  • TITANIUM-NITRIDE
  • ELECTRICAL-PROPERTIES
  • CONTACT STRUCTURES
  • TIN
  • SILICON
  • METAL
  • SI
  • EVAPORATION
  • HAFNIUM
  • OXYGEN

Cite this