Erratum: Structural, optical, and electrical properties of orthorhombic κ -(InxGa1-x)2O3 thin films (APL Materials (2019) 7 (022525) DOI: 10.1063/1.5054394)

A. Hassa, H. Von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann

Research output: Other contributionScientificpeer-review

Abstract

Due to a misassignment of EDX and XRD data of the electrically conducting Zr-doped sample, electrical transport data and properties of Schottky barrier diodes reported in the original article1 were determined for a sample having monoclinic β-gallia structure. The data as well as its analysis are valid; however, it must be attributed to the monoclinic β-phase instead of the orthorhombic κ-phase. The structural and optical data of the ternary κ-(InxGa1-x)2O3 thin film with lateral spread of the cation composition are valid, and this erratum does not affect these results nor their interpretation.

Original languageEnglish
PublisherAIP
DOIs
Publication statusPublished - 1 Jul 2019
MoE publication typeNot Eligible

Publication series

NameAPL Materials
PublisherAMERICAN INSTITUTE OF PHYSICS
ISSN (Print)2166-532X

Fingerprint Dive into the research topics of 'Erratum: Structural, optical, and electrical properties of orthorhombic κ -(In<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> thin films (APL Materials (2019) 7 (022525) DOI: 10.1063/1.5054394)'. Together they form a unique fingerprint.

Cite this