@misc{4ee66511249b4e90bd526f649a6f8fe1,
title = "Erratum: Structural, optical, and electrical properties of orthorhombic κ -(InxGa1-x)2O3 thin films (APL Materials (2019) 7 (022525) DOI: 10.1063/1.5054394)",
abstract = "Due to a misassignment of EDX and XRD data of the electrically conducting Zr-doped sample, electrical transport data and properties of Schottky barrier diodes reported in the original article1 were determined for a sample having monoclinic β-gallia structure. The data as well as its analysis are valid; however, it must be attributed to the monoclinic β-phase instead of the orthorhombic κ-phase. The structural and optical data of the ternary κ-(InxGa1-x)2O3 thin film with lateral spread of the cation composition are valid, and this erratum does not affect these results nor their interpretation.",
author = "A. Hassa and {Von Wenckstern}, H. and D. Splith and C. Sturm and M. Knei{\ss} and V. Prozheeva and M. Grundmann",
year = "2019",
month = jul,
day = "1",
doi = "10.1063/1.5099518",
language = "English",
series = "APL Materials",
publisher = "American Institute of Physics",
address = "United States",
type = "Other",
}