@techreport{228c264395774c4c8497728f51855c33,
title = "Epitaxial Silicon Carbide Grown on (100) Silicon Substrates by Molecular Beam Epitaxy",
keywords = "diamond, mbe, silicon carbide, diamond, mbe, silicon carbide, diamond, mbe, silicon carbide",
author = "V.-M. Airaksinen and J. Kaitila and H. Niemi and J. Lahtinen and J. Saarilahti",
year = "1994",
language = "English",
series = "The XXVIII Annual Conference of the Finnish Physical Society, J{\"a}rvenp{\"a}{\"a}, March 16-18, 1994",
publisher = "The Finnish Physical Society",
pages = "2",
type = "WorkingPaper",
institution = "The Finnish Physical Society",
}