Epitaxial Silicon Carbide Grown on (100) Silicon Substrates by Molecular Beam Epitaxy

V.-M. Airaksinen, J. Kaitila, H. Niemi, J. Lahtinen, J. Saarilehti

Research output: Working paperProfessional

Original languageEnglish
Place of PublicationHelsinki
Pages2
Publication statusPublished - 1994
MoE publication typeD4 Published development or research report or study

Publication series

NameThe XXVIII Annual Conference of the Finnish Physical Society, Järvenpää, March 16-18, 1994
PublisherThe Finnish Physical Society

Keywords

  • diamond
  • mbe
  • silicon carbide

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