Epitaxial Silicon Carbide Grown on (100) Silicon Substrates by Molecular Beam Epitaxy

V.-M. Airaksinen, J. Kaitila, H. Niemi, J. Lahtinen, J. Saarilehti

Research output: Working paper › Professional

Original language	English
Place of Publication	Helsinki
Pages	2
Publication status	Published - 1994
MoE publication type	D4 Published development or research report or study

Name	The XXVIII Annual Conference of the Finnish Physical Society, Järvenpää, March 16-18, 1994
Publisher	The Finnish Physical Society

Keywords

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title = "Epitaxial Silicon Carbide Grown on (100) Silicon Substrates by Molecular Beam Epitaxy",

keywords = "diamond, mbe, silicon carbide, diamond, mbe, silicon carbide, diamond, mbe, silicon carbide",

author = "V.-M. Airaksinen and J. Kaitila and H. Niemi and J. Lahtinen and J. Saarilehti",

year = "1994",

language = "English",

series = "The XXVIII Annual Conference of the Finnish Physical Society, J{\"a}rvenp{\"a}{\"a}, March 16-18, 1994",

publisher = "The Finnish Physical Society",

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TY - UNPB

T1 - Epitaxial Silicon Carbide Grown on (100) Silicon Substrates by Molecular Beam Epitaxy

AU - Airaksinen, V.-M.

AU - Kaitila, J.

AU - Niemi, H.

AU - Lahtinen, J.

AU - Saarilehti, J.

PY - 1994

Y1 - 1994

KW - diamond

KW - mbe

KW - silicon carbide

KW - diamond

KW - mbe

KW - silicon carbide

KW - diamond

KW - mbe

KW - silicon carbide

M3 - Working paper

T3 - The XXVIII Annual Conference of the Finnish Physical Society, Järvenpää, March 16-18, 1994

SP - 2

BT - Epitaxial Silicon Carbide Grown on (100) Silicon Substrates by Molecular Beam Epitaxy

CY - Helsinki

ER -