Epitaxial lateral overgrowth of indium phosphide on silicon

M. Karilahti, T. Tuomi, Z.R. Zytkiewicz, P.J. McNally

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationHampuri
    Pages251-252
    Publication statusPublished - 2003
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameHASYLAB-DESY Annual Report 2002, Part I

    Keywords

    • InP on silicon
    • synchrotron x-ray topography

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