@techreport{1782a0419a5843f5853fcbec35640cee,
title = "Epitaxial lateral overgrowth of gallium arsenide studied by synchrotron topography",
keywords = "epitaxial, gallium arsenide, lateral, overgrown, synchrotron, x-ray topography, epitaxial, gallium arsenide, lateral, overgrown, synchrotron, x-ray topography, epitaxial, gallium arsenide, lateral, overgrown, synchrotron, x-ray topography",
author = "R. Rantam{\"a}ki and T. Tuomi and Z.R. Zytkiewicz and D. Dobosz and P.J. McNally and A.N. Danilewsky",
year = "1999",
language = "English",
series = "Materials Research Society 1999 Spring Meeting, San Francisco, California, USA, April 4-9, 1999",
pages = "339",
type = "WorkingPaper",
}