Epitaxial lateral overgrowth of gallium arsenide studied by synchrotron topography

R. Rantamäki, T. Tuomi, Z.R. Zytkiewicz, D. Dobosz, P.J. McNally, A.N. Danilewsky

    Research output: Working paperProfessional

    4 Citations (Scopus)
    Original languageEnglish
    Place of PublicationTurku
    Publication statusPublished - 1999
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameXXXIII Annual Conference of the Finnish Physical Society, Turku, March 4-6, 1999


    • epitaxial
    • gallium arsenide
    • lateral
    • overgrown
    • synchrotron
    • x-ray topography

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