Epitaxial growth of GaAs on silicon-on-ilsulator

Research output: Working paperProfessional

Standard

Epitaxial growth of GaAs on silicon-on-ilsulator. / Riikonen, J.; Knuuttila, L.; Tuomi, T.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.; Danilewsky, A.N.

Hampuri, 2001. p. 859-860 (HASYLAB-DESY Annual Report 2000, Part I).

Research output: Working paperProfessional

Harvard

Riikonen, J, Knuuttila, L, Tuomi, T, Lipsanen, H, McNally, PJ, Kanatharana, J, Chen, W, Lowney, D & Danilewsky, AN 2001 'Epitaxial growth of GaAs on silicon-on-ilsulator' HASYLAB-DESY Annual Report 2000, Part I, Hampuri, pp. 859-860.

APA

Riikonen, J., Knuuttila, L., Tuomi, T., Lipsanen, H., McNally, P. J., Kanatharana, J., ... Danilewsky, A. N. (2001). Epitaxial growth of GaAs on silicon-on-ilsulator. (pp. 859-860). (HASYLAB-DESY Annual Report 2000, Part I). Hampuri.

Vancouver

Riikonen J, Knuuttila L, Tuomi T, Lipsanen H, McNally PJ, Kanatharana J et al. Epitaxial growth of GaAs on silicon-on-ilsulator. Hampuri. 2001, p. 859-860. (HASYLAB-DESY Annual Report 2000, Part I).

Author

Riikonen, J. ; Knuuttila, L. ; Tuomi, T. ; Lipsanen, H. ; McNally, P.J. ; Kanatharana, J. ; Chen, W. ; Lowney, D. ; Danilewsky, A.N. / Epitaxial growth of GaAs on silicon-on-ilsulator. Hampuri, 2001. pp. 859-860 (HASYLAB-DESY Annual Report 2000, Part I).

Bibtex - Download

@techreport{afb55284bb7c421092ff21286fec4cb4,
title = "Epitaxial growth of GaAs on silicon-on-ilsulator",
keywords = "GaAs, MOVPE, silicon-on-insulator, SOI, GaAs, MOVPE, silicon-on-insulator, SOI, GaAs, MOVPE, silicon-on-insulator, SOI",
author = "J. Riikonen and L. Knuuttila and T. Tuomi and H. Lipsanen and P.J. McNally and J. Kanatharana and W. Chen and D. Lowney and A.N. Danilewsky",
year = "2001",
language = "English",
series = "HASYLAB-DESY Annual Report 2000, Part I",
pages = "859--860",
type = "WorkingPaper",

}

RIS - Download

TY - UNPB

T1 - Epitaxial growth of GaAs on silicon-on-ilsulator

AU - Riikonen, J.

AU - Knuuttila, L.

AU - Tuomi, T.

AU - Lipsanen, H.

AU - McNally, P.J.

AU - Kanatharana, J.

AU - Chen, W.

AU - Lowney, D.

AU - Danilewsky, A.N.

PY - 2001

Y1 - 2001

KW - GaAs

KW - MOVPE

KW - silicon-on-insulator

KW - SOI

KW - GaAs

KW - MOVPE

KW - silicon-on-insulator

KW - SOI

KW - GaAs

KW - MOVPE

KW - silicon-on-insulator

KW - SOI

M3 - Working paper

T3 - HASYLAB-DESY Annual Report 2000, Part I

SP - 859

EP - 860

BT - Epitaxial growth of GaAs on silicon-on-ilsulator

CY - Hampuri

ER -

ID: 4133067