Epitaxial growth of GaAs on silicon-on-insulator

J. Riikonen; L. Knuuttila; T. Tuomi; H. Lipsanen; P.J. McNally; J. Kanatharana; W. Chen; D. Lowney; A.N. Danilewsky

Epitaxial growth of GaAs on silicon-on-insulator

J. Riikonen, L. Knuuttila, T. Tuomi, H. Lipsanen, P.J. McNally, J. Kanatharana, W. Chen, D. Lowney, A.N. Danilewsky

Research output: Working paper › Professional

Original language	English
Place of Publication	Hampuri
Pages	859-860
Publication status	Published - 2001
MoE publication type	D4 Published development or research report or study

Publication series

Name	HASYLAB-DESY Annual Report 2000, Part I

Keywords

GaAs
MOVPE
silicon-on-insulator
SOI

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Full text

Cite this

@techreport{afb55284bb7c421092ff21286fec4cb4,

title = "Epitaxial growth of GaAs on silicon-on-insulator",

keywords = "GaAs, MOVPE, silicon-on-insulator, SOI, GaAs, MOVPE, silicon-on-insulator, SOI, GaAs, MOVPE, silicon-on-insulator, SOI",

author = "J. Riikonen and L. Knuuttila and T. Tuomi and H. Lipsanen and P.J. McNally and J. Kanatharana and W. Chen and D. Lowney and A.N. Danilewsky",

year = "2001",

language = "English",

series = "HASYLAB-DESY Annual Report 2000, Part I",

pages = "859--860",

type = "WorkingPaper",

}

TY - UNPB

T1 - Epitaxial growth of GaAs on silicon-on-insulator

AU - Riikonen, J.

AU - Knuuttila, L.

AU - Tuomi, T.

AU - Lipsanen, H.

AU - McNally, P.J.

AU - Kanatharana, J.

AU - Chen, W.

AU - Lowney, D.

AU - Danilewsky, A.N.

PY - 2001

Y1 - 2001

KW - GaAs

KW - MOVPE

KW - silicon-on-insulator

KW - SOI

KW - GaAs

KW - MOVPE

KW - silicon-on-insulator

KW - SOI

KW - GaAs

KW - MOVPE

KW - silicon-on-insulator

KW - SOI

M3 - Working paper

T3 - HASYLAB-DESY Annual Report 2000, Part I

SP - 859

EP - 860

BT - Epitaxial growth of GaAs on silicon-on-insulator

CY - Hampuri

ER -