Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


Research units

  • University of Eastern Finland
  • University of Arizona


We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.


Original languageEnglish
Title of host publicationIntegrated Optics: Devices, Materials, and Technologies XX
EditorsJean-Emmanuel Broquin, Gualtiero Nunzi Conti
Publication statusPublished - 2016
MoE publication typeA4 Article in a conference publication
EventIntegrated Optics: Devices, Materials, and Technologies - San Francisco, United States
Duration: 15 Feb 201617 Feb 2016
Conference number: 20

Publication series

NameSPIE conference proceedings
ISSN (Print)0227-786X
ISSN (Electronic)1996-756X


ConferenceIntegrated Optics
CountryUnited States
CitySan Francisco

    Research areas

  • atomic layer deposition, Erbium, integrated optics, optical amplifier, photoluminescence

ID: 6978404