Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

John Rönn*, Lasse Karvonen, Alexander Pyymäki-Perros, Nasser Peyghambarian, Harri Lipsanen, Antti Säynätjoki, Zhipei Sun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

Original languageEnglish
Title of host publicationIntegrated Optics: Devices, Materials, and Technologies XX
EditorsJean-Emmanuel Broquin, Gualtiero Nunzi Conti
Number of pages8
Volume9750
ISBN (Electronic)9781628419856
DOIs
Publication statusPublished - 2016
MoE publication typeA4 Article in a conference publication
EventIntegrated Optics: Devices, Materials, and Technologies - San Francisco, United States
Duration: 15 Feb 201617 Feb 2016
Conference number: 20

Publication series

NameSPIE conference proceedings
PublisherSPIE
Volume9750
ISSN (Print)0227-786X
ISSN (Electronic)1996-756X

Conference

ConferenceIntegrated Optics
CountryUnited States
CitySan Francisco
Period15/02/201617/02/2016

Keywords

  • atomic layer deposition
  • Erbium
  • integrated optics
  • optical amplifier
  • photoluminescence

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    Rönn, J., Karvonen, L., Pyymäki-Perros, A., Peyghambarian, N., Lipsanen, H., Säynätjoki, A., & Sun, Z. (2016). Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition. In J-E. Broquin, & G. N. Conti (Eds.), Integrated Optics: Devices, Materials, and Technologies XX (Vol. 9750). [97500P] (SPIE conference proceedings; Vol. 9750). https://doi.org/10.1117/12.2212990