Abstract
We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.
Original language | English |
---|---|
Title of host publication | Integrated Optics: Devices, Materials, and Technologies XX |
Editors | Jean-Emmanuel Broquin, Gualtiero Nunzi Conti |
Publisher | SPIE |
Number of pages | 8 |
Volume | 9750 |
ISBN (Electronic) | 9781628419856 |
DOIs | |
Publication status | Published - 2016 |
MoE publication type | A4 Conference publication |
Event | Integrated Optics: Devices, Materials, and Technologies - San Francisco, United States Duration: 15 Feb 2016 → 17 Feb 2016 Conference number: 20 |
Publication series
Name | SPIE conference proceedings |
---|---|
Publisher | SPIE |
Volume | 9750 |
ISSN (Print) | 0227-786X |
ISSN (Electronic) | 1996-756X |
Conference
Conference | Integrated Optics |
---|---|
Country/Territory | United States |
City | San Francisco |
Period | 15/02/2016 → 17/02/2016 |
Keywords
- atomic layer deposition
- Erbium
- integrated optics
- optical amplifier
- photoluminescence