Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

John Rönn; Lasse Karvonen; Alexander Pyymäki-Perros; Nasser Peyghambarian; Harri Lipsanen; Antti Säynätjoki; Zhipei Sun

doi:10.1117/12.2212990

Enhancement of the photoluminescence in Er-doped Al₂O₃ fabricated by atomic layer deposition

John Rönn^*, Lasse Karvonen, Alexander Pyymäki-Perros, Nasser Peyghambarian, Harri Lipsanen, Antti Säynätjoki, Zhipei Sun

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 10²¹ cm^-3) Er-Al₂O₃ samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er₂O₃ and Al₂O₃ were deposited on top of silicon in an alternating fashion with ALD. Five Er₂O₃-Al₂O₃ samples were fabricated by keeping the amount of Er₂O₃ constant but changing the thickness of the Al₂O₃-layers between the Er₂O₃-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al₂O₃-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

Original language	English
Title of host publication	Integrated Optics: Devices, Materials, and Technologies XX
Editors	Jean-Emmanuel Broquin, Gualtiero Nunzi Conti
Publisher	SPIE
Number of pages	8
Volume	9750
ISBN (Electronic)	9781628419856
DOIs	https://doi.org/10.1117/12.2212990
Publication status	Published - 2016
MoE publication type	A4 Conference publication
Event	Integrated Optics: Devices, Materials, and Technologies - San Francisco, United States Duration: 15 Feb 2016 → 17 Feb 2016 Conference number: 20

Publication series

Name	SPIE conference proceedings
Publisher	SPIE
Volume	9750
ISSN (Print)	0227-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Integrated Optics
Country/Territory	United States
City	San Francisco
Period	15/02/2016 → 17/02/2016

Keywords

atomic layer deposition
Erbium
integrated optics
optical amplifier
photoluminescence

Access to Document

10.1117/12.2212990

Cite this

Rönn, J., Karvonen, L., Pyymäki-Perros, A., Peyghambarian, N., Lipsanen, H., Säynätjoki, A., & Sun, Z. (2016). Enhancement of the photoluminescence in Er-doped Al₂O₃ fabricated by atomic layer deposition. In J.-E. Broquin, & G. N. Conti (Eds.), Integrated Optics: Devices, Materials, and Technologies XX (Vol. 9750). Article 97500P (SPIE conference proceedings; Vol. 9750). SPIE. https://doi.org/10.1117/12.2212990

@inproceedings{edf75fd25f6b408aa9cad2a56fd9325b,

title = "Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition",

abstract = "We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.",

keywords = "atomic layer deposition, Erbium, integrated optics, optical amplifier, photoluminescence",

author = "John R{\"o}nn and Lasse Karvonen and Alexander Pyym{\"a}ki-Perros and Nasser Peyghambarian and Harri Lipsanen and Antti S{\"a}yn{\"a}tjoki and Zhipei Sun",

year = "2016",

doi = "10.1117/12.2212990",

language = "English",

volume = "9750",

series = "SPIE conference proceedings",

publisher = "SPIE",

editor = "Jean-Emmanuel Broquin and Conti, {Gualtiero Nunzi}",

booktitle = "Integrated Optics: Devices, Materials, and Technologies XX",

address = "United States",

note = "Integrated Optics : Devices, Materials, and Technologies ; Conference date: 15-02-2016 Through 17-02-2016",

}

Rönn, J, Karvonen, L, Pyymäki-Perros, A, Peyghambarian, N, Lipsanen, H, Säynätjoki, A & Sun, Z 2016, Enhancement of the photoluminescence in Er-doped Al₂O₃ fabricated by atomic layer deposition. in J-E Broquin & GN Conti (eds), Integrated Optics: Devices, Materials, and Technologies XX. vol. 9750, 97500P, SPIE conference proceedings, vol. 9750, SPIE, Integrated Optics, San Francisco, California, United States, 15/02/2016. https://doi.org/10.1117/12.2212990

Enhancement of the photoluminescence in Er-doped Al₂O₃ fabricated by atomic layer deposition. / Rönn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander et al.
Integrated Optics: Devices, Materials, and Technologies XX. ed. / Jean-Emmanuel Broquin; Gualtiero Nunzi Conti. Vol. 9750 SPIE, 2016. 97500P (SPIE conference proceedings; Vol. 9750).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

AU - Rönn, John

AU - Karvonen, Lasse

AU - Pyymäki-Perros, Alexander

AU - Peyghambarian, Nasser

AU - Lipsanen, Harri

AU - Säynätjoki, Antti

AU - Sun, Zhipei

N1 - Conference code: 20

PY - 2016

Y1 - 2016

N2 - We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

AB - We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.

KW - atomic layer deposition

KW - Erbium

KW - integrated optics

KW - optical amplifier

KW - photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=84981306327&partnerID=8YFLogxK

U2 - 10.1117/12.2212990

DO - 10.1117/12.2212990

M3 - Conference article in proceedings

AN - SCOPUS:84981306327

VL - 9750

T3 - SPIE conference proceedings

BT - Integrated Optics: Devices, Materials, and Technologies XX

A2 - Broquin, Jean-Emmanuel

A2 - Conti, Gualtiero Nunzi

PB - SPIE

T2 - Integrated Optics

Y2 - 15 February 2016 through 17 February 2016

ER -

Enhancement of the photoluminescence in Er-doped Al₂O₃ fabricated by atomic layer deposition

Abstract

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Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition

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OtaNano - Nanofab

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Enhancement of the photoluminescence in Er-doped Al₂O₃ fabricated by atomic layer deposition