The authors report on the application of the novel lithium precursor lithium trimethylsilanolate (LiTMSO) for use in atomic layer deposition (ALD) processes. Through different reaction paths, LiTMSO have been used for the deposition of Li2CO3, LixSiyOz, and LixAlyOz in the temperature range 200-300 degrees C. LiTMSO can provide enhanced process and composition control for the deposition of lithium containing materials by ALD, as compared to the commonly used precursors. It was possible to vary the Li: Al ratio in the deposition of LixAlyOz in a larger range than previously shown, as confirmed by time-of-flight elastic recoil detection analysis. The authors also report on the applicability of lithium benzoate, lithium acetate, and lithium trifluoroacetate as precursors for ALD, proving inferior to LiTMSO. (C) 2016 American Vacuum Society.