Enhanced p-Type Transparent Semiconducting Characteristics for ALD-Grown Mg-Substituted CuCrO2 Thin Films

Tripurari S. Tripathi; Maarit Karppinen

doi:10.1002/aelm.201600341

Enhanced p-Type Transparent Semiconducting Characteristics for ALD-Grown Mg-Substituted CuCrO₂ Thin Films

Tripurari S. Tripathi
, Maarit Karppinen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

44 Citations (Scopus)

299 Downloads (Pure)

Abstract

Magnesium-substituted CuCrO₂ delafossite is a promising candidate for p-type transparent conducting oxide applications owing to its relatively high electrical conductivity and optical transparency in the visible range. Here, the atomic layer deposition fabrication of semiconducting Cu(Cr_1- _xMg_x)O₂ (up to x = 0.043) thin films based on Cu(thd)₂ (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate), Cr(acac)₃ (acac = acetyl acetonate), and Mg(thd)₂ as metal precursors and ozone as the oxygen source is reported. Smooth and homogeneous thin films with an accurately controlled Mg content are obtained at the deposition temperature of 250 °C. A limited substitution level is revealed from X-diffraction patterns: peaks due to the spinel-structured MgCr₂O₄ secondary phase appear for x ≥ 0.015 while the increase in lattice parameters of the delafossite Cu(Cr,Mg)O₂ phase continues even up to x ≈ 0.03. The direct bandgap as determined from UV-vis spectrophotometric measurements is observed to decrease from 3.09 eV for x = 0 to 2.87 eV for x = 0.015 before increasing to 3.15 eV for x = 0.043. The observed transmittance is close to 80% in the visible range. These characteristics are superior to the thin films of the copper delafossite family prepared by any thin-film technique.

Original language	English
Article number	1600341
Number of pages	7
Journal	Advanced Electronic Materials
Volume	3
Issue number	6
Early online date	2016
DOIs	https://doi.org/10.1002/aelm.201600341
Publication status	Published - Jun 2017
MoE publication type	A1 Journal article-refereed

Keywords

Atomic layer deposition
Delafossites
Magnesium-substituted CuCrO
P-type transparent conducting oxides

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10.1002/aelm.201600341

ERC-28-acceptedAccepted author manuscript, 381 KBLicence: Unspecified

Cite this

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title = "Enhanced p-Type Transparent Semiconducting Characteristics for ALD-Grown Mg-Substituted CuCrO2 Thin Films",

abstract = "Magnesium-substituted CuCrO2 delafossite is a promising candidate for p-type transparent conducting oxide applications owing to its relatively high electrical conductivity and optical transparency in the visible range. Here, the atomic layer deposition fabrication of semiconducting Cu(Cr1- xMgx)O2 (up to x = 0.043) thin films based on Cu(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate), Cr(acac)3 (acac = acetyl acetonate), and Mg(thd)2 as metal precursors and ozone as the oxygen source is reported. Smooth and homogeneous thin films with an accurately controlled Mg content are obtained at the deposition temperature of 250 °C. A limited substitution level is revealed from X-diffraction patterns: peaks due to the spinel-structured MgCr2O4 secondary phase appear for x ≥ 0.015 while the increase in lattice parameters of the delafossite Cu(Cr,Mg)O2 phase continues even up to x ≈ 0.03. The direct bandgap as determined from UV-vis spectrophotometric measurements is observed to decrease from 3.09 eV for x = 0 to 2.87 eV for x = 0.015 before increasing to 3.15 eV for x = 0.043. The observed transmittance is close to 80\% in the visible range. These characteristics are superior to the thin films of the copper delafossite family prepared by any thin-film technique.",

keywords = "Atomic layer deposition, Delafossites, Magnesium-substituted CuCrO, P-type transparent conducting oxides",

author = "Tripathi, \{Tripurari S.\} and Maarit Karppinen",

note = "| openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT ",

year = "2017",

month = jun,

doi = "10.1002/aelm.201600341",

language = "English",

volume = "3",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley",

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T1 - Enhanced p-Type Transparent Semiconducting Characteristics for ALD-Grown Mg-Substituted CuCrO2 Thin Films

AU - Tripathi, Tripurari S.

AU - Karppinen, Maarit

N1 - | openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT

PY - 2017/6

Y1 - 2017/6

N2 - Magnesium-substituted CuCrO2 delafossite is a promising candidate for p-type transparent conducting oxide applications owing to its relatively high electrical conductivity and optical transparency in the visible range. Here, the atomic layer deposition fabrication of semiconducting Cu(Cr1- xMgx)O2 (up to x = 0.043) thin films based on Cu(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate), Cr(acac)3 (acac = acetyl acetonate), and Mg(thd)2 as metal precursors and ozone as the oxygen source is reported. Smooth and homogeneous thin films with an accurately controlled Mg content are obtained at the deposition temperature of 250 °C. A limited substitution level is revealed from X-diffraction patterns: peaks due to the spinel-structured MgCr2O4 secondary phase appear for x ≥ 0.015 while the increase in lattice parameters of the delafossite Cu(Cr,Mg)O2 phase continues even up to x ≈ 0.03. The direct bandgap as determined from UV-vis spectrophotometric measurements is observed to decrease from 3.09 eV for x = 0 to 2.87 eV for x = 0.015 before increasing to 3.15 eV for x = 0.043. The observed transmittance is close to 80% in the visible range. These characteristics are superior to the thin films of the copper delafossite family prepared by any thin-film technique.

AB - Magnesium-substituted CuCrO2 delafossite is a promising candidate for p-type transparent conducting oxide applications owing to its relatively high electrical conductivity and optical transparency in the visible range. Here, the atomic layer deposition fabrication of semiconducting Cu(Cr1- xMgx)O2 (up to x = 0.043) thin films based on Cu(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate), Cr(acac)3 (acac = acetyl acetonate), and Mg(thd)2 as metal precursors and ozone as the oxygen source is reported. Smooth and homogeneous thin films with an accurately controlled Mg content are obtained at the deposition temperature of 250 °C. A limited substitution level is revealed from X-diffraction patterns: peaks due to the spinel-structured MgCr2O4 secondary phase appear for x ≥ 0.015 while the increase in lattice parameters of the delafossite Cu(Cr,Mg)O2 phase continues even up to x ≈ 0.03. The direct bandgap as determined from UV-vis spectrophotometric measurements is observed to decrease from 3.09 eV for x = 0 to 2.87 eV for x = 0.015 before increasing to 3.15 eV for x = 0.043. The observed transmittance is close to 80% in the visible range. These characteristics are superior to the thin films of the copper delafossite family prepared by any thin-film technique.

KW - Atomic layer deposition

KW - Delafossites

KW - Magnesium-substituted CuCrO

KW - P-type transparent conducting oxides

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DO - 10.1002/aelm.201600341

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SN - 2199-160X

VL - 3

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 6

M1 - 1600341

ER -

Enhanced p-Type Transparent Semiconducting Characteristics for ALD-Grown Mg-Substituted CuCrO₂ Thin Films

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Molecular-Layer-Engineered Inorganic-Organic Hybrid Materials

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Enhanced p-Type Transparent Semiconducting Characteristics for ALD-Grown Mg-Substituted CuCrO2 Thin Films

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Enhanced p-Type Transparent Semiconducting Characteristics for ALD-Grown Mg-Substituted CuCrO₂ Thin Films