Enhanced luminescence of near-surface quantum wells passivated in situ by InP

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

Research units

  • VTT Technical Research Centre of Finland

Abstract

Metallorganic vapor phase epitaxially-grown AlxGa1-xAs/GaAs structures were passivated by in situ deposition of a monolayer of InP on the surface. The surface recombination was studied by photoluminescence measurements of near-surface Al0.22Ga0.78As/GaAs quantum wells. The luminescence intensity of the passivated samples increased by about five orders of magnitude for quantum wells located at less than 5 nm from the surface as compared to unpassivated samples.

Details

Original languageEnglish
Title of host publicationEighth International Conference on Indium Phosphide and Related Materials, 1996
Publication statusPublished - 1996
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Indium Phosphide and Related Materials - Schwabisch Gmund, Germany
Duration: 21 Apr 199625 Apr 1996
Conference number: 8

Conference

ConferenceInternational Conference on Indium Phosphide and Related Materials
Abbreviated titleIPRM
CountryGermany
CitySchwabisch Gmund
Period21/04/199625/04/1996

ID: 5546911