Enhanced 1.3 µm luminescence from InGaAs/GaAs quantum dots with GaAsN strain compensating layer

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientific

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Original languageEnglish
Title of host publicationXIV European Workshop on Metalorganic Vapor Phase Epitaxy EW-MOVPE 2011
Publication statusPublished - 2011
MoE publication typeB3 Non-refereed article in conference proceedings

    Research areas

  • Finland, photoluminesce, quantum dots, Raman spectroscopy, strain compesating

ID: 554749