Enhanced 1.3 µm luminescence from InGaAs self-assembled quantum dots with a GaAsN strain-compensating layer

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Original languageEnglish
Article number085029
Pages (from-to)1-4
Number of pages4
JournalSemiconductor Science and Technology
Volume26
Issue number8
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

ID: 883482