@inproceedings{8535436afd2d4c3b9f1afb9ff340af70,
title = "Enhanced 1.3 µm luminescence from InGaAs/GaAs quantum dots with GaAsN strain compensating layer",
keywords = "Finland, photoluminesce, quantum dots, Raman spectroscopy, strain compesating, Finland, photoluminesce, quantum dots, Raman spectroscopy, strain compesating, Finland, photoluminesce, quantum dots, Raman spectroscopy, strain compesating",
author = "A. Aierken and S. Nagarajan and T. Huhtio and M. Sopanen and H. Lipsanen",
year = "2011",
language = "English",
pages = "93--96",
booktitle = "XIV European Workshop on Metalorganic Vapor Phase Epitaxy EW-MOVPE 2011",
}