Enhanced 1.3 µm luminescence from InGaAs/GaAs quantum dots with GaAsN strain compensating layer

A. Aierken, S. Nagarajan, T. Huhtio, M. Sopanen, H. Lipsanen

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientific

Original languageEnglish
Title of host publicationXIV European Workshop on Metalorganic Vapor Phase Epitaxy EW-MOVPE 2011
Pages93-96
Publication statusPublished - 2011
MoE publication typeB3 Non-refereed article in conference proceedings

Keywords

  • Finland
  • photoluminesce
  • quantum dots
  • Raman spectroscopy
  • strain compesating

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