Engineering dielectric materials for high-performance organic light emitting transistors (Olets)

Caterina Soldano

doi:10.3390/ma14133756

Engineering dielectric materials for high-performance organic light emitting transistors (Olets)

Caterina Soldano^*

^*Corresponding author for this work

Research output: Contribution to journal › Review Article › peer-review

17 Citations (Scopus)

182 Downloads (Pure)

Abstract

Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.

Original language	English
Article number	3756
Number of pages	34
Journal	Materials
Volume	14
Issue number	13
DOIs	https://doi.org/10.3390/ma14133756
Publication status	Published - 1 Jul 2021
MoE publication type	A2 Review article, Literature review, Systematic review

Keywords

Gate dielectrics
High-k dielectrics
High-k oxide
High-k polymer
Insulating layer
Light manipulation
Low-bias transistors
Organic light emitting transistor (OLET)

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10.3390/ma14133756Licence: CC BY

ELEC_Soldani_Engineering_dielectric_materialsFinal published version, 20 MBLicence: CC BY

Cite this

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title = "Engineering dielectric materials for high-performance organic light emitting transistors (Olets)",

abstract = "Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.",

keywords = "Gate dielectrics, High-k dielectrics, High-k oxide, High-k polymer, Insulating layer, Light manipulation, Low-bias transistors, Organic light emitting transistor (OLET)",

author = "Caterina Soldano",

note = "Funding Information: The Author thanks the support from Academy of Finland Flagship Program (Grant No.: 320167, PREIN). Author thanks Gianluca Generali and many colleagues in ETC srl and CNR-ISMN (Italy) for valuable discussions on organic light emitting transistors during the years. Funding Information: Acknowledgments: The Author thanks the support from Academy of Finland Flagship Program (Grant No.: 320167, PREIN). Author thanks Gianluca Generali and many colleagues in ETC srl and CNR-ISMN (Italy) for valuable discussions on organic light emitting transistors during the years. Publisher Copyright: {\textcopyright} 2021 by the author. Licensee MDPI, Basel, Switzerland.",

year = "2021",

month = jul,

day = "1",

doi = "10.3390/ma14133756",

language = "English",

volume = "14",

journal = "Materials",

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AU - Soldano, Caterina

N1 - Funding Information: The Author thanks the support from Academy of Finland Flagship Program (Grant No.: 320167, PREIN). Author thanks Gianluca Generali and many colleagues in ETC srl and CNR-ISMN (Italy) for valuable discussions on organic light emitting transistors during the years. Funding Information: Acknowledgments: The Author thanks the support from Academy of Finland Flagship Program (Grant No.: 320167, PREIN). Author thanks Gianluca Generali and many colleagues in ETC srl and CNR-ISMN (Italy) for valuable discussions on organic light emitting transistors during the years. Publisher Copyright: © 2021 by the author. Licensee MDPI, Basel, Switzerland.

PY - 2021/7/1

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N2 - Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.

AB - Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.

KW - Gate dielectrics

KW - High-k dielectrics

KW - High-k oxide

KW - High-k polymer

KW - Insulating layer

KW - Light manipulation

KW - Low-bias transistors

KW - Organic light emitting transistor (OLET)

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U2 - 10.3390/ma14133756

DO - 10.3390/ma14133756

M3 - Review Article

AN - SCOPUS:85110383050

SN - 1996-1944

VL - 14

JO - Materials

JF - Materials

IS - 13

M1 - 3756

ER -

Engineering dielectric materials for high-performance organic light emitting transistors (Olets)

Abstract

Keywords

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PREIN: Photonics Research and Innovation

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Engineering dielectric materials for high-performance organic light emitting transistors (Olets)

Abstract

Keywords

Access to Document

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PREIN: Photonics Research and Innovation

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