Engineering dielectric materials for high-performance organic light emitting transistors (Olets)

Caterina Soldano*

*Corresponding author for this work

Research output: Contribution to journalReview Articlepeer-review

12 Citations (Scopus)
117 Downloads (Pure)

Abstract

Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.

Original languageEnglish
Article number3756
Number of pages34
JournalMaterials
Volume14
Issue number13
DOIs
Publication statusPublished - 1 Jul 2021
MoE publication typeA2 Review article, Literature review, Systematic review

Keywords

  • Gate dielectrics
  • High-k dielectrics
  • High-k oxide
  • High-k polymer
  • Insulating layer
  • Light manipulation
  • Low-bias transistors
  • Organic light emitting transistor (OLET)

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