Eliminating light-induced degradation in commercial p-Type Czochralski silicon solar cells

Brett Hallam*, Axel Herguth, Phillip Hamer, Nitin Nampalli, Svenja Wilking, Malcolm Abbott, Stuart Wenham, Giso Hahn

*Corresponding author for this work

Research output: Contribution to journalReview ArticleScientificpeer-review

42 Citations (Scopus)
174 Downloads (Pure)

Abstract

This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

Original languageEnglish
Article number10
JournalApplied Sciences (Switzerland)
Volume8
Issue number1
DOIs
Publication statusPublished - 2018
MoE publication typeA2 Review article in a scientific journal

Keywords

  • Boron-oxygen
  • Hydrogen passivation
  • Light-induced degradation
  • P-type Czochralski
  • Regeneration
  • Silicon solar cell

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