Elementary Steps on the 4He Crystal Interface Probed by 3He Atoms

V. Tsepelin; J. P. Saramäki; A. V. Babkin; P. J. Hakonen; J. J. Hyvönen; R. M. Luusalo; A.Ya. Parshin; G. K. Tvalashvili

doi:10.1103/PhysRevLett.83.4804

Elementary Steps on the 4He Crystal Interface Probed by 3He Atoms

V. Tsepelin, J. P. Saramäki, A. V. Babkin^*, P. J. Hakonen, J. J. Hyvönen, R. M. Luusalo, A.Ya. Parshin, G. K. Tvalashvili

^*Corresponding author for this work

Department of Applied Physics

Russian Academy of Sciences

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

The growth dynamics of c facets, governed by individual Frank-Read type of sources, has been studied at millikelvin temperatures in the presence of small concentrations of ³He atoms in the liquid. We find that in the spiral growth regime, interaction of ³He atoms with moving elementary steps on the surface results in additional friction. Our results are compared with theory, where high-frequency (ω ≥ T/ℏ) zero-point oscillations of the steps are taken into account. There is a good agreement if we assume the amplitude of these oscillations ξ ≈ 5 nm.

Original language	English
Pages (from-to)	4804-4807
Number of pages	4
Journal	Physical Review Letters
Volume	83
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevLett.83.4804
Publication status	Published - 6 Dec 1999
MoE publication type	A1 Journal article-refereed

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@article{f3945fe9ecd9432fafe7f0a10b1bd7b3,

title = "Elementary Steps on the 4He Crystal Interface Probed by 3He Atoms",

abstract = "The growth dynamics of c facets, governed by individual Frank-Read type of sources, has been studied at millikelvin temperatures in the presence of small concentrations of 3He atoms in the liquid. We find that in the spiral growth regime, interaction of 3He atoms with moving elementary steps on the surface results in additional friction. Our results are compared with theory, where high-frequency (ω ≥ T/ℏ) zero-point oscillations of the steps are taken into account. There is a good agreement if we assume the amplitude of these oscillations ξ ≈ 5 nm.",

author = "V. Tsepelin and Saram{\"a}ki, {J. P.} and Babkin, {A. V.} and Hakonen, {P. J.} and Hyv{\"o}nen, {J. J.} and Luusalo, {R. M.} and A.Ya. Parshin and Tvalashvili, {G. K.}",

year = "1999",

month = dec,

day = "6",

doi = "10.1103/PhysRevLett.83.4804",

language = "English",

volume = "83",

pages = "4804--4807",

journal = "Physical Review Letters",

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T1 - Elementary Steps on the 4He Crystal Interface Probed by 3He Atoms

AU - Tsepelin, V.

AU - Saramäki, J. P.

AU - Babkin, A. V.

AU - Hakonen, P. J.

AU - Hyvönen, J. J.

AU - Luusalo, R. M.

AU - Parshin, A.Ya.

AU - Tvalashvili, G. K.

PY - 1999/12/6

Y1 - 1999/12/6

N2 - The growth dynamics of c facets, governed by individual Frank-Read type of sources, has been studied at millikelvin temperatures in the presence of small concentrations of 3He atoms in the liquid. We find that in the spiral growth regime, interaction of 3He atoms with moving elementary steps on the surface results in additional friction. Our results are compared with theory, where high-frequency (ω ≥ T/ℏ) zero-point oscillations of the steps are taken into account. There is a good agreement if we assume the amplitude of these oscillations ξ ≈ 5 nm.

AB - The growth dynamics of c facets, governed by individual Frank-Read type of sources, has been studied at millikelvin temperatures in the presence of small concentrations of 3He atoms in the liquid. We find that in the spiral growth regime, interaction of 3He atoms with moving elementary steps on the surface results in additional friction. Our results are compared with theory, where high-frequency (ω ≥ T/ℏ) zero-point oscillations of the steps are taken into account. There is a good agreement if we assume the amplitude of these oscillations ξ ≈ 5 nm.

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U2 - 10.1103/PhysRevLett.83.4804

DO - 10.1103/PhysRevLett.83.4804

M3 - Article

AN - SCOPUS:0013217411

SN - 0031-9007

VL - 83

SP - 4804

EP - 4807

JO - Physical Review Letters

JF - Physical Review Letters

IS - 23

ER -

Elementary Steps on the 4He Crystal Interface Probed by 3He Atoms

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