Electronically induced trapping of hydrogen by impurities in niobium

Matti Manninen*, M. J. Puska, R. M. Nieminen, P. Jena

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

20 Citations (Scopus)
183 Downloads (Pure)

Abstract

The binding energies of hydrogen and its isotopes to substitutional impurities Ti, Cr, and V in niobium have been calculated. The hydrogen-metal interaction is based on the effective-medium theory. The wave mechanics of the hydrogenic interstitials are explicity dealt with, and the lattice distortion created by the hydrogen is incorporated through the method of lattice statics. The difference in the electronic structure between impurity and host atoms is shown to be largely responsible for the binding of hydrogen to the impurities. The results are in agreement with recent inelastic neutron scattering experiments.

Original languageEnglish
Pages (from-to)1065-1068
Number of pages4
JournalPhysical Review B
Volume30
Issue number2
DOIs
Publication statusPublished - 15 Jul 1984
MoE publication typeA1 Journal article-refereed

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