TY - JOUR
T1 - Electronic Transport Properties of Carbon-Nanotube Networks
T2 - The Effect of Nitrate Doping on Intratube and Intertube Conductances
AU - Ketolainen, T.
AU - Havu, V.
AU - Jónsson, E.
AU - Puska, M. J.
PY - 2018/3/15
Y1 - 2018/3/15
N2 - The conductivity of carbon-nanotube (CNT) networks can be improved markedly by doping with nitric acid. In the present work, CNTs and junctions of CNTs functionalized with NO3 molecules are investigated to understand the microscopic mechanism of nitric acid doping. According to our density-functional-theory band-structure calculations, there is charge transfer from the CNT to adsorbed molecules indicating p-type doping. The average doping efficiency of the NO3 molecules is higher if the NO3 molecules form complexes with water molecules. In addition to electron transport along individual CNTs, we also study electron transport between different types (metallic, semiconducting) of CNTs. Reflecting the differences in the electronic structures of semiconducting and metallic CNTs, we find that in addition to turning semiconducting CNTs metallic, doping further increases electron transport most efficiently along semiconducting CNTs as well as through the junctions between them.
AB - The conductivity of carbon-nanotube (CNT) networks can be improved markedly by doping with nitric acid. In the present work, CNTs and junctions of CNTs functionalized with NO3 molecules are investigated to understand the microscopic mechanism of nitric acid doping. According to our density-functional-theory band-structure calculations, there is charge transfer from the CNT to adsorbed molecules indicating p-type doping. The average doping efficiency of the NO3 molecules is higher if the NO3 molecules form complexes with water molecules. In addition to electron transport along individual CNTs, we also study electron transport between different types (metallic, semiconducting) of CNTs. Reflecting the differences in the electronic structures of semiconducting and metallic CNTs, we find that in addition to turning semiconducting CNTs metallic, doping further increases electron transport most efficiently along semiconducting CNTs as well as through the junctions between them.
UR - http://www.scopus.com/inward/record.url?scp=85044118959&partnerID=8YFLogxK
U2 - 10.1103/PhysRevApplied.9.034010
DO - 10.1103/PhysRevApplied.9.034010
M3 - Article
AN - SCOPUS:85044118959
SN - 2331-7019
VL - 9
SP - 1
EP - 13
JO - Physical Review Applied
JF - Physical Review Applied
IS - 3
M1 - 034010
ER -