Electronic structure of the phosphorous-vacancy complex in silicon: a resonant-bond model

Maria G. Ganchenkova, A.Yu. Kuznetsov, Risto M. Nieminen

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)
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Abstract

Using first-principles calculations, the electronic structure of the phosphorus-vacancy pair in silicon has been studied. Detailed analysis of the atomic displacement fields associated with the atomic structure optimization after the defect formation indicates a strong dependence of the character and magnitude of relaxation both on the supercell size and the E-center charge state. Our simulation results strongly suggest that the E-center structure is of the resonant-bond type with a strong localization of an electron pair at the phosphorus atom. The energy level splitting for shared electrons in a vacancy due to the appearance of the resonance distortion is discussed, as well as the nature of and the reasons for the level occupation.
Original languageEnglish
Article number115204
Pages (from-to)1-11
JournalPhysical Review B
Volume70
Issue number11
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

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