Electronic structure and positron states at vacancies in Si and GaAs

M. J. Puska*, O. Jepsen, O. Gunnarsson, R. M. Nieminen

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

89 Citations (Scopus)


The self-consistent electron structures of the perfect Si and GaAs lattices are calculated by the linear-muffin-tin-orbital (LMTO) band-structure method within the atomic-sphere approximation (ASA). Monovacancies in different charge states are treated by the self-consistent LMTO-ASA Greens-function method. The corresponding positron states are determined by the same methods and positron annihilation characteristics are calculated. The results are compared with recent experiments.

Original languageEnglish
Pages (from-to)2695-2705
Number of pages11
JournalPhysical Review B
Issue number4
Publication statusPublished - 15 Aug 1986
MoE publication typeA1 Journal article-refereed


Dive into the research topics of 'Electronic structure and positron states at vacancies in Si and GaAs'. Together they form a unique fingerprint.

Cite this