Electron-phonon coupling in heavily doped silicon

P Kivinen*, A Savin, A Manninen, J Pekola, M Prunnila, J Ahopelto

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

The coupling constant in electron-phonon interaction is a very important issue in nanoscale applications. We have measured this constant in heavily doped silicon, Electron-phonon interaction is proportional to 7(6) and the coupling constant is found to be 1.5x10(8) W/K-5 m(3), which is about one tenth of the value in normal metals.

Original languageEnglish
Title of host publicationPhysics, Chemistry and Application of Nanostructures
EditorsVE Borisenko, SV Gaponenko, VS Gurin
PublisherWorld Scientific Publishing Company
Pages180-183
Number of pages4
ISBN (Electronic)978-981-4491-06-8
ISBN (Print)978-981-02-4618-1
DOIs
Publication statusPublished - Apr 2001
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Physics, Chemistry and Application of Nanostructures - Minsk, Belarus
Duration: 22 May 200125 May 2001

Conference

ConferenceInternational Conference on Physics, Chemistry and Application of Nanostructures
CountryBelarus
CityMinsk
Period22/05/200125/05/2001

Keywords

  • REFRIGERATION

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