Electron gas refrigeration and thermometry by semiconductor-superconductor junctions

M. Prunnila*, J. Ahopelto, Alexandre Savine, P. Kivinen, J. Pekola

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

We have demonstrated thermometry and refrigeration of electrons in heavily doped silicon by quasiparticle tunneling at low temperatures using a superconductor-semiconductor-superconductor double Schottky junction structure. Aluminum is used as the superconductor and a thin heavily doped silicon-on-insulator film as the semiconductor. Characteristics of samples with different doping levels are reported.

Original languageEnglish
Title of host publicationPhysics of Semiconductors 2002, Proceedings
EditorsA.R. Long, J.H. Davies
PublisherIOP Publishing Ltd.
Pages269-275
Number of pages7
ISBN (Print)0-7503-0924-5
Publication statusPublished - 2003
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Physics of Semiconductors - Edinburgh, United Kingdom
Duration: 29 Jul 20022 Aug 2002
Conference number: 26

Publication series

NameInstitute of Physics Conference Series
Volume171
ISSN (Print)0951-3248

Conference

ConferenceInternational Conference on Physics of Semiconductors
CountryUnited Kingdom
CityEdinburgh
Period29/07/200202/08/2002

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