Electroluminescent cooling using double diode structures

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Abstract

The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.

Details

Original languageEnglish
Title of host publication18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018
EditorsJoachim Piprek, Aleksandra B. Djurisic
Publication statusPublished - 7 Dec 2018
MoE publication typeA4 Article in a conference publication
EventInternational Conference on Numerical Simulation of Optoelectronic Devices - Hong Kong, China
Duration: 5 Nov 20189 Nov 2018
Conference number: 18

Conference

ConferenceInternational Conference on Numerical Simulation of Optoelectronic Devices
Abbreviated titleNUSOD
CountryChina
CityHong Kong
Period05/11/201809/11/2018

ID: 31642825