Abstract
The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.
Original language | English |
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Title of host publication | 18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018 |
Editors | Joachim Piprek, Aleksandra B. Djurisic |
Publisher | IEEE |
Pages | 125-126 |
Number of pages | 2 |
Volume | 2018-November |
ISBN (Electronic) | 9781538655993 |
DOIs | |
Publication status | Published - 7 Dec 2018 |
MoE publication type | A4 Conference publication |
Event | International Conference on Numerical Simulation of Optoelectronic Devices - Hong Kong, China Duration: 5 Nov 2018 → 9 Nov 2018 Conference number: 18 |
Conference
Conference | International Conference on Numerical Simulation of Optoelectronic Devices |
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Abbreviated title | NUSOD |
Country/Territory | China |
City | Hong Kong |
Period | 05/11/2018 → 09/11/2018 |