Electroluminescent cooling using double diode structures

Toufik Sadi; Ivan Radevici; Pyry Kivisaari; Alberto Casado; Jani Oksanen

doi:10.1109/NUSOD.2018.8570294

Electroluminescent cooling using double diode structures

Toufik Sadi, Ivan Radevici, Pyry Kivisaari, Alberto Casado, Jani Oksanen

Department of Neuroscience and Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

3 Citations (Scopus)

Abstract

The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.

Original language	English
Title of host publication	18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018
Editors	Joachim Piprek, Aleksandra B. Djurisic
Publisher	IEEE
Pages	125-126
Number of pages	2
Volume	2018-November
ISBN (Electronic)	9781538655993
DOIs	https://doi.org/10.1109/NUSOD.2018.8570294
Publication status	Published - 7 Dec 2018
MoE publication type	A4 Conference publication
Event	International Conference on Numerical Simulation of Optoelectronic Devices - Hong Kong, China Duration: 5 Nov 2018 → 9 Nov 2018 Conference number: 18

Conference

Conference	International Conference on Numerical Simulation of Optoelectronic Devices
Abbreviated title	NUSOD
Country/Territory	China
City	Hong Kong
Period	05/11/2018 → 09/11/2018

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10.1109/NUSOD.2018.8570294

Cite this

@inproceedings{1381d1860a5b456aa066bb8f6bff55a4,

title = "Electroluminescent cooling using double diode structures",

abstract = "The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.",

author = "Toufik Sadi and Ivan Radevici and Pyry Kivisaari and Alberto Casado and Jani Oksanen",

note = "| openaire: EC/H2020/638173/EU//iTPX ; International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD ; Conference date: 05-11-2018 Through 09-11-2018",

year = "2018",

month = dec,

day = "7",

doi = "10.1109/NUSOD.2018.8570294",

language = "English",

volume = "2018-November",

pages = "125--126",

editor = "Joachim Piprek and Djurisic, {Aleksandra B.}",

booktitle = "18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018",

publisher = "IEEE",

address = "United States",

}

Sadi, T, Radevici, I , Kivisaari, P, Casado, A & Oksanen, J 2018, Electroluminescent cooling using double diode structures. in J Piprek & AB Djurisic (eds), 18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018. vol. 2018-November, 8570294, IEEE, pp. 125-126, International Conference on Numerical Simulation of Optoelectronic Devices, Hong Kong, China, 05/11/2018. https://doi.org/10.1109/NUSOD.2018.8570294

Electroluminescent cooling using double diode structures. / Sadi, Toufik; Radevici, Ivan ; Kivisaari, Pyry et al.
18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018. ed. / Joachim Piprek; Aleksandra B. Djurisic. Vol. 2018-November IEEE, 2018. p. 125-126 8570294.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Electroluminescent cooling using double diode structures

AU - Sadi, Toufik

AU - Radevici, Ivan

AU - Kivisaari, Pyry

AU - Casado, Alberto

AU - Oksanen, Jani

N1 - Conference code: 18

PY - 2018/12/7

Y1 - 2018/12/7

N2 - The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.

AB - The progress in optical cooling in recent years is resulting in a renewed interest in electroluminescent (EL) cooling using conventional III-V semiconductor light emitting diodes (LEDs). In this work, we address the limiting factors for observing EL cooling in III-As intracavity double diode structures (DDSs), at high powers at and close to 300K, by using a combination of experimental characterization and physical device models. The studied DDSs incorporate optically-coupled III-As LED and p-n homojunction photodiode (PD) structures, integrated in a single device and providing a favourable environment for EL cooling observation. We employ a modelling framework coupling the drift-diffusion charge transport model to a photon transport model calibrated using measurements on real devices at different temperatures. Results suggest that the bulk properties of the III-V materials are already sufficient for EL cooling.

UR - http://www.scopus.com/inward/record.url?scp=85060010299&partnerID=8YFLogxK

U2 - 10.1109/NUSOD.2018.8570294

DO - 10.1109/NUSOD.2018.8570294

M3 - Conference article in proceedings

AN - SCOPUS:85060010299

VL - 2018-November

SP - 125

EP - 126

BT - 18th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2018

A2 - Piprek, Joachim

A2 - Djurisic, Aleksandra B.

PB - IEEE

T2 - International Conference on Numerical Simulation of Optoelectronic Devices

Y2 - 5 November 2018 through 9 November 2018

ER -

Electroluminescent cooling using double diode structures

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Electroluminescent cooling using double diode structures

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