Electroluminescent Cooling in III-V Intracavity Diodes: Efficiency Bottlenecks

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Electroluminescent Cooling in III-V Intracavity Diodes : Efficiency Bottlenecks. / Sadi, Toufik; Radevici, Ivan; Kivisaari, Pyry; Oksanen, Jani.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 6, 8693895, 01.06.2019, p. 2651-2656.

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@article{a51c8085cead4ae0957abb8d2a272112,
title = "Electroluminescent Cooling in III-V Intracavity Diodes: Efficiency Bottlenecks",
abstract = "Recent advances in the photoluminescent cooling of doped glasses provoke the question of whether similar progress is possible in electroluminescent cooling (ELC), and if so, what are the conditions for observing it at high powers. Here, we establish a simulation framework for III-V intracavity double-diode structures (DDSs) intended for studying ELC and introduce and analyze the most relevant figures of merit for the recently measured devices exhibiting the highest reported quantum efficiency of 70{\%}. In essence, the DDSs optically couple a GaInP/GaAs double heterojunction light-emitting diode (LED) and a GaAs p-n homojunction photodetector (PD), integrated as a single device. The modeling framework couples the drift-diffusion charge transport model with a photon transport model and uses our recent experimental measurements for validation and the extraction of important material parameters. Results show that the model can accurately describe the experimental behavior over many orders of magnitude and suggest that the internal efficiency of the LED already exceeds the cooling threshold. Directly observing cooling in the presently studied devices, however, is still hindered by bottlenecks arising from the surface recombination at the LED walls and recombination losses in the PD.",
keywords = "double-diode structures, electroluminescent cooling, III-As, light-emitting diodes (LEDs)",
author = "Toufik Sadi and Ivan Radevici and Pyry Kivisaari and Jani Oksanen",
note = "| openaire: EC/H2020/638173/EU//iTPX",
year = "2019",
month = "6",
day = "1",
doi = "10.1109/TED.2019.2910219",
language = "English",
volume = "66",
pages = "2651--2656",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "6",

}

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TY - JOUR

T1 - Electroluminescent Cooling in III-V Intracavity Diodes

T2 - Efficiency Bottlenecks

AU - Sadi, Toufik

AU - Radevici, Ivan

AU - Kivisaari, Pyry

AU - Oksanen, Jani

N1 - | openaire: EC/H2020/638173/EU//iTPX

PY - 2019/6/1

Y1 - 2019/6/1

N2 - Recent advances in the photoluminescent cooling of doped glasses provoke the question of whether similar progress is possible in electroluminescent cooling (ELC), and if so, what are the conditions for observing it at high powers. Here, we establish a simulation framework for III-V intracavity double-diode structures (DDSs) intended for studying ELC and introduce and analyze the most relevant figures of merit for the recently measured devices exhibiting the highest reported quantum efficiency of 70%. In essence, the DDSs optically couple a GaInP/GaAs double heterojunction light-emitting diode (LED) and a GaAs p-n homojunction photodetector (PD), integrated as a single device. The modeling framework couples the drift-diffusion charge transport model with a photon transport model and uses our recent experimental measurements for validation and the extraction of important material parameters. Results show that the model can accurately describe the experimental behavior over many orders of magnitude and suggest that the internal efficiency of the LED already exceeds the cooling threshold. Directly observing cooling in the presently studied devices, however, is still hindered by bottlenecks arising from the surface recombination at the LED walls and recombination losses in the PD.

AB - Recent advances in the photoluminescent cooling of doped glasses provoke the question of whether similar progress is possible in electroluminescent cooling (ELC), and if so, what are the conditions for observing it at high powers. Here, we establish a simulation framework for III-V intracavity double-diode structures (DDSs) intended for studying ELC and introduce and analyze the most relevant figures of merit for the recently measured devices exhibiting the highest reported quantum efficiency of 70%. In essence, the DDSs optically couple a GaInP/GaAs double heterojunction light-emitting diode (LED) and a GaAs p-n homojunction photodetector (PD), integrated as a single device. The modeling framework couples the drift-diffusion charge transport model with a photon transport model and uses our recent experimental measurements for validation and the extraction of important material parameters. Results show that the model can accurately describe the experimental behavior over many orders of magnitude and suggest that the internal efficiency of the LED already exceeds the cooling threshold. Directly observing cooling in the presently studied devices, however, is still hindered by bottlenecks arising from the surface recombination at the LED walls and recombination losses in the PD.

KW - double-diode structures

KW - electroluminescent cooling

KW - III-As

KW - light-emitting diodes (LEDs)

UR - http://www.scopus.com/inward/record.url?scp=85065882639&partnerID=8YFLogxK

U2 - 10.1109/TED.2019.2910219

DO - 10.1109/TED.2019.2910219

M3 - Article

VL - 66

SP - 2651

EP - 2656

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 6

M1 - 8693895

ER -

ID: 34202515