Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)239-244
Number of pages6
JournalSemiconductors
Volume51
Issue number2
Publication statusPublished - Feb 2017
MoE publication typeA1 Journal article-refereed

Researchers

Research units

  • RAS - Ioffe Physico Technical Institute
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • Microsensor Technology

Abstract

The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2-300 K. At low temperatures (T = 4.2-100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 mu m. The emission becomes spontaneous at T > 70 K due to the resonant "switch-on" of the CHHS Auger recombination process in which the energy of a recombining electron-hole pair is transferred to a hole, with hole transition to the spin-orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.

    Research areas

  • LASERS, PARAMETERS, INAS

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