Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K

K. D. Mynbaev*, N. L. Bazhenov, A. A. Semakova, M. P. Mikhailova, N. D. Stoyanov, S. S. Kizhaev, S. S. Molchanov, A. P. Astakhova, A. V. Chernyaev, H. Lipsanen, V. E. Bougrov

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2-300 K. At low temperatures (T = 4.2-100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 mu m. The emission becomes spontaneous at T > 70 K due to the resonant "switch-on" of the CHHS Auger recombination process in which the energy of a recombining electron-hole pair is transferred to a hole, with hole transition to the spin-orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.

Original languageEnglish
Pages (from-to)239-244
Number of pages6
JournalSemiconductors
Volume51
Issue number2
DOIs
Publication statusPublished - Feb 2017
MoE publication typeA1 Journal article-refereed

Keywords

  • LASERS
  • PARAMETERS
  • INAS

Cite this

Mynbaev, K. D., Bazhenov, N. L., Semakova, A. A., Mikhailova, M. P., Stoyanov, N. D., Kizhaev, S. S., ... Bougrov, V. E. (2017). Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K. Semiconductors, 51(2), 239-244. https://doi.org/10.1134/S1063782617020117