Electrical spin manipulation in graphene nanostructures

R. Ortiz*, N. A. García-Martínez, J. L. Lado, J. Fernández-Rossier

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)

Abstract

We propose a mechanism to drive singlet-triplet spin transitions electrically in a wide class of graphene nanostructures that present pairs of in-gap zero modes, localized at opposite sublattices. Examples are rectangular nanographenes with short zigzag edges, armchair ribbon heterojunctions with topological in-gap states, and graphene islands with sp3 functionalization. The interplay between the hybridization of zero modes and the Coulomb repulsion leads to symmetric exchange interaction that favors a singlet ground state. Application of an off-plane electric field to the graphene nanostructure generates an additional Rashba spin-orbit coupling, which results in antisymmetric exchange interaction that mixes S=0 and S=1 manifolds. We show that modulation in time of either the off-plane electric field or the applied magnetic field permits performing electrically driven spin resonance in a system with very long spin-relaxation times.

Original languageEnglish
Article number195425
JournalPhysical Review B
Volume97
Issue number19
DOIs
Publication statusPublished - 17 May 2018
MoE publication typeA1 Journal article-refereed

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