Abstract
Picosecond acoustic pulses, generated in a thin aluminum transducer, are injected into semiconductor vertical transport devices consisting of core-shell GaAsP nanowires. The acoustic pulses induce current pulses in the device with amplitude ∼1 μA. The spectrum of the electrical response is sensitive to the elastic properties of the device and has a frequency cutoff at ∼10 GHz. This work shows the potential of the technique for studies the elastic properties of complex semiconductor nanodevices.
Original language | English |
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Article number | 062102 |
Pages (from-to) | 1-4 |
Number of pages | 4 |
Journal | Applied Physics Letters |
Volume | 104 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2014 |
MoE publication type | A1 Journal article-refereed |