Electrical deactivation by vacancy-impurity complexes in highly As-doped Si

V. Ranki, K. Saarinen, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen

Research output: Contribution to journal › Article › Scientific › peer-review

33 Citations (Scopus)

Keywords

@article{0a5a0b5ecd0c42b49c5a63f22323c9ae,

title = "Electrical deactivation by vacancy-impurity complexes in highly As-doped Si",

keywords = "positron, positron, positron",

author = "V. Ranki and K. Saarinen and J. Fage-Pedersen and {Lundsgaard Hansen}, J. and {Nylandsted Larsen}, A.",

year = "2003",

language = "English",

volume = "67",

journal = "Physical Review B",

issn = "2469-9969",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Electrical deactivation by vacancy-impurity complexes in highly As-doped Si

AU - Ranki, V.

AU - Saarinen, K.

AU - Fage-Pedersen, J.

AU - Lundsgaard Hansen, J.

AU - Nylandsted Larsen, A.

PY - 2003

Y1 - 2003

KW - positron

M3 - Article

SN - 2469-9969

SN - 1550-235X

SN - 1095-3795

VL - 67

JO - Physical Review B

JF - Physical Review B

ER -