Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS2

Yunyun Dai, Yadong Wang, Susobhan Das, Hui Xue, Xueyin Bai, Eero Hulkko, Guangyu Zhang, Xiaoxia Yang, Qing Dai, Zhipei Sun

Research output: Contribution to journalArticleScientificpeer-review

36 Citations (Scopus)
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Monolayer transition-metal dichalcogenides show strong optical nonlinearity with great potential for various emerging applications. Here we demonstrate the gate-tunable interband resonant four-wave mixing and sum-frequency generation in monolayer MoS2. Up to 80% modulation depth in four-wave mixing is achieved when the generated signal is resonant with the A exciton at room temperature, corresponding to an effective third-order optical nonlinearity |χ(3)eff| tuning from (∼12.0 to 5.45) × 10-18 m2/V2. The tunability of the effective second-order optical nonlinearity |χ(2)eff| at 440 nm C-exciton resonance wavelength is also demonstrated from (∼11.6 to 7.40) × 10-9 m/V with sum-frequency generation. Such a large tunability in optical nonlinearities arises from the strong excitonic charging effect in monolayer transition-metal dichalcogenides, which allows for the electrical control of the interband excitonic transitions and thus nonlinear optical responses for future on-chip nonlinear optoelectronics.

Original languageEnglish
Pages (from-to)8442-8448
Number of pages7
JournalACS Nano
Issue number7
Publication statusPublished - 28 Jul 2020
MoE publication typeA1 Journal article-refereed


  • exciton
  • four-wave mixing
  • gate tunability
  • MoS2
  • nonlinear optics
  • sum-frequency generation


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