Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium
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- Università Degli Studi di Padova
- CNR-ENEA-EURATOM Association
Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.
|Journal||Applied Physics Letters|
|Publication status||Published - 31 Oct 2016|
|MoE publication type||A1 Journal article-refereed|