Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

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Researchers

Research units

  • Università Degli Studi di Padova
  • CNR
  • CNR-ENEA-EURATOM Association

Abstract

Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.

Details

Original languageEnglish
Article number182107
Pages (from-to)1-4
JournalApplied Physics Letters
Volume109
Issue number18
Publication statusPublished - 31 Oct 2016
MoE publication typeA1 Journal article-refereed

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