Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

T. Kalliovaara; J. Slotte; I. Makkonen; J. Kujala; F. Tuomisto; R. Milazzo; G. Impellizzeri; G. Fortunato; E. Napolitani

doi:10.1063/1.4966947

Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

T. Kalliovaara
, J. Slotte
, I. Makkonen
, J. Kujala
, F. Tuomisto
, R. Milazzo
, G. Impellizzeri
, G. Fortunato
, E. Napolitani

Department of Applied Physics

University of Padova
National Research Council of Italy
CNR-ENEA-EURATOM Association

Research output: Contribution to journal › Article › Scientific › peer-review

13 Citations (Scopus)

224 Downloads (Pure)

Abstract

Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.

Original language	English
Article number	182107
Pages (from-to)	1-4
Journal	Applied Physics Letters
Volume	109
Issue number	18
DOIs	https://doi.org/10.1063/1.4966947
Publication status	Published - 31 Oct 2016
MoE publication type	A1 Journal article-refereed

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10.1063/1.4966947

1.4966947Final published version, 999 KB

Cite this

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title = "Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium",

abstract = "Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.",

author = "T. Kalliovaara and J. Slotte and I. Makkonen and J. Kujala and F. Tuomisto and R. Milazzo and G. Impellizzeri and G. Fortunato and E. Napolitani",

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T1 - Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

AU - Kalliovaara, T.

AU - Slotte, J.

AU - Makkonen, I.

AU - Kujala, J.

AU - Tuomisto, F.

AU - Milazzo, R.

AU - Impellizzeri, G.

AU - Fortunato, G.

AU - Napolitani, E.

PY - 2016/10/31

Y1 - 2016/10/31

N2 - Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.

AB - Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.

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DO - 10.1063/1.4966947

M3 - Article

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JO - Applied Physics Letters

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ER -

Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

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Large-scale electronic structure techniques for advanced materials characterization

Large-scale electronic structure techniques for advanced materials characterization

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Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium

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