Electrical compensation by Ga vacancies in Ga2O3

Research output: Contribution to journalArticle


Original languageEnglish
Article number242103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number24
StatePublished - 2015
MoE publication typeA1 Journal article-refereed


  • Esa Korhonen
  • Filip Tuomisto

  • D. Gogova
  • G. Wagner
  • M. Baldini
  • Z. Galazka
  • R. Schewski
  • M. Albrecht

Research units

  • Leibniz Institute for Crystal Growth (IKZ), Berlin


The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2O3 thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In2O3, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as Oi.

    Research areas

  • Ga2O3, positron, vacancy

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