Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

I. Prozheev*, F. Mehnke, T. Wernicke, M. Kneissl, F. Tuomisto

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)
1 Downloads (Pure)

Abstract

We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in the concentration range from below 1 × 10 16 cm-3 to 2 × 10 18 cm-3 in samples with a high C content, strongly correlated with the Si doping level in the samples ranging from 1 × 10 17 cm-3 to 7 × 10 18 cm-3. On the other hand, we find predominantly neutral cation vacancies with concentrations above 5 × 10 18 cm-3 in samples with a low C content. The cation vacancies are important as compensating centers only in material with a high C content at high Si doping levels.

Original languageEnglish
Article number142103
Number of pages5
JournalApplied Physics Letters
Volume117
Issue number14
DOIs
Publication statusPublished - 5 Oct 2020
MoE publication typeA1 Journal article-refereed

Fingerprint

Dive into the research topics of 'Electrical compensation and cation vacancies in Al rich Si-doped AlGaN'. Together they form a unique fingerprint.

Cite this